1N4007 Bridge Rectifier Diode is a general-purpose silicon diode. 1N4007 Bridge Rectifier Diode is a p–n diode which is a type of two-terminal semiconductor diode based upon the p–n junction that conducts current in only one direction, made by joining a p-type semiconducting layer to an n-type semiconducting layer. Typical applications for use in general-purpose rectification of power supplies, inverters, converters, and freewheeling diodes application.
We have also a large variety of different rectifiers like 1N5408 1A, uF4007, 10 10A, etc.
Features of 1N4007 Bridge Rectifier Diode:
- Diffused junction.
- High current capability and low forward voltage drop.
- Surge overload rating to 30A peak.
- Low reserve leakage current.
- Lead-free finish, RoHS compliant.
Specifications of 1N4007 Bridge Rectifier Diode:
| Product Category | Rectifiers |
| Product | Standard Recovery Rectifiers |
| Configuration | Single |
| Reverse Voltage | 1000V |
| Forward Voltage Drop | 1.1V |
| Recovery Time | 2000ns |
| Forward Continuous Current | 1A |
| Max Surge Current | 30A |
| Reverse Current IR: | 5uA |
| Mounting Style | Through Hole |
| Maximum Operating Temperature | +175C |
| Minimum Operating Temperature | -65C |
Applications:
- Half-wave Rectifier.
- Full Wave Rectifier.
- Bridge Rectifier.
- DIY projects requiring voltage rectification.
Package Includes:
1 x 1N4007 Bridge Rectifier Diode
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