Mosfet transistor K100E08N1 In Pakistan

Type Designator: TK100E08N1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 255 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 26 nS

Package Include: 

1 x  Mosfet transistor K100E08N1