Used Toshiba Gt60m324 60m324 Igbt Transistor

The GT60M324 60M324 is a sixth-generation Insulated Gate Bipolar Transistor (IGBT) designed for consumer applications, specifically for voltage resonance inverter switching. It includes a Fast Recovery Diode (FRD) between the emitter and collector and operates in enhancement mode.

Key features include:

• High-speed IGBT with a typical fall time (tf) of 0.11µs at a collector current (IC) of 60A.
• FRD with a typical reverse recovery time (trr) of 0.8µs at a di/dt of -20 A/µs.
• Low saturation voltage with a typical collector-emitter saturation voltage (VCE (sat)) of 1.70V at IC = 60A.
• High junction temperature with a maximum (Tj) of 175℃.

The absolute maximum ratings at an ambient temperature (Ta) of 25°C are as follows:

• Collector-emitter voltage (VCES): 900V
• Gate-emitter voltage (VGES): ±25V
• DC collector current (IC): 60A
• Pulse collector current for 1ms (ICP): 120A
• DC diode forward current (IF): 15A
• Pulse diode forward current for 1ms (IFP): 120A
• Collector power dissipation at Tc = 25°C (PC): 254W
• Junction temperature (Tj): 175°C
• Storage temperature range (Tstg): -40 to 175°C

Please note that continuous use under heavy loads may decrease the reliability of this product significantly, even if the operating conditions are within the absolute maximum ratings. It’s recommended to design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook and individual reliability data.

The device has a positive temperature coefficient, which means the loss of IGBT increases more when it gets higher temperature. If the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermal runaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.

The marking equivalent circuit unit is in millimeters, and the weight is typically around 4.6g. For details on environmental matters such as RoHS compatibility, please contact your TOSHIBA sales representative.

The electrical characteristics at Ta = 25°C are as follows:

• Gate leakage current (IGES) when VGE = ±25 V and VCE = 0: ±500 nA
• Collector cut-off current (ICES) when VCE = 900 V and VGE = 0: up to 1.0 mA
• Gate-emitter cut-off voltage (VGE(OFF)) when IC = 60 mA and VCE = 5 V: between 4.5V and 7.5V
• Collector-emitter saturation voltage (VCE(sat)) when IC = between 10A and 60A and VGE = 15 V: between 1.10V and 2.00V
• Input capacitance (Cies) when VCE = 10 V, VGE = 0, and frequency f = 1 MHz: around 3600 pF
• Switching times including rise time (tr), turn-on time (ton), fall time (tf), and turn-off time (toff) under resistive load conditions where VCC = 600 V, IC = 60 A, VGG = ±15 V, and RG = 51 Ω: between 0.19 µs and 0.60 µs
• Diode forward voltage (VF) when IF =15 A and VGE =0: between 1.3V and 1.9V
• Reverse recovery time (trr) when IF =15 A, VGE =0, and di/dt = -20 A/µs: around 0.8 µs
• Thermal resistance for IGBT Rth(j-c): around 0.59 °C/W
• Thermal resistance for Diode Rth(j-c): around 4.0 °C/W